Novel FET structures based on bundled C-60 nanowhiskers

摘要

We report on the electrical properties of Field-Effect Transistors (FETs) based on C-60 nano-whiskers (C-60 NWs). The C-60 NWs-FETs exhibits n-channel, nonually-on, properties and the carrier mobility is estimated to be almost 2 x 10(-2)cm(2)/Vs under vacuum conditions at room temperature. We also report on C-60 NWs-FET characteristics with low work-function source and drain (Mg) electrodes. The carrier mobility of Mg-electrode device is slightly higher than that of the Au-electrode one.