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Anomalous Hall effect in a two-dimensional electron system: unified analysis of side-jump and skew scattering mechanisms

机译:二维电子系统中的异常霍尔效应:侧跳和偏斜散射机构的统一分析

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We present a unified kinetic equation approach to analyze the side-jump and skew scattering anomalous Hall contributions in a two-dimensional electron system with extrinsic spin-orbit coupling and also spin-orbit coupling induced directly by the driving electric field. Considering long-range electron-impurity scattering up to the second Born approximation, we derive the side-jump and skew scattering contributions to the anomalous Hall conductivity on an equal basis. Our numerical analysis shows that in a typical two-dimensional semiconductor with magnetization, both the side-jump and skew anomalous Hall conductivities are of the same order of magnitude. For an attractive electron-impurity scattering potential, their signs are the same as that of the ordinary Hall conductivity. Also, we make it clear that the anomalous Hall effect is relatively small in comparison with the ordinary one in the diffusive regime.
机译:我们提出了一种统一的动力学方程方法,分析了具有外部自旋轨道耦合的二维电子系统中的侧跳和偏移散射异常展会,并由驱动电场直接诱导的旋转轨道耦合。考虑到远程电子 - 杂质散射到第二个出生的近似,我们将侧跳和偏斜散射贡献相等地衍生给异常霍尔电导率。我们的数值分析表明,在具有磁化的典型的二维半导体中,侧跳和歪斜的异常霍尔电导率具有相同的数量级。对于有吸引力的电子 - 杂质散射电位,它们的迹象与普通霍尔电导率的迹象相同。此外,我们明确表示异常霍尔效应与普通的漫游政权相比相对较少。

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