Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures

摘要

We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Forster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films.