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Ion analysis of the reactive and non-reactive magnetron sputtering process of indium tin oxide

机译:氧化铟锡反应性和非反应磁控溅射工艺的离子分析

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Mass and energy spectra of ions have been measured in magnetron sputtering processes for indium tin oxide deposition. Targets were indium tin or indium tin oxide which have been sputtered either non-reactively (Ar) or reactively (Ar/O_2). Discharges in reactive atmosphere revealed the same results for both target materials. Non-reactive sputtering of the indium-tin-oxide target results in increased ion flux for the high-energetic negative oxygen, however with reduced energy due to lower discharge impedance. In contrast, the lower-energy part of negative ions is reduced in this case. High-energetic positive ions have been detected when oxygen is present in the target or gas. These are identified as charge-exchange products from negative ions.
机译:在磁控溅射方法中测量了离子的质量和能谱,用于氧化铟锡沉积。靶标是锡锡或氧化铟锡,其已经溅射(Ar)或反应性(Ar / O_2)。反应气氛中的放电揭示了靶材料的相同结果。铟 - 氧化铟锡靶的非反应性溅射导致高能负氧的离子通量增加,然而由于放电阻抗引起的能量降低。相反,在这种情况下,负离子的下部能量部分降低。当氧气存在于目标或气体时,已检测到高能正离子。这些被鉴定为来自负离子的电荷交换产品。

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