首页> 外文会议>International Symposium on VLSI Technology, Systems, and Applications >A Shallow-'ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process
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A Shallow-'ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process

机译:018PM CMOS技术的浅浅闸隔离研究,重点是井设计,通道静置植入物,挖水机深度和Palicide过程的影响

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