The reliability of multilevel analog memory in a voice storage and playback system using source-side injection flash

摘要

The reliability of multilevel analog memory is mainly determined by data retention, cycling endurance, and read and write disturb. This storage system retains a voice message for 10 years and can record continuously for 50K cycles. It can tolerate up to 300 single cell retention shifts > 50 mV and still meet THD <0.5% and SINAD> 32 dB.