Gallium Nitride P-N Junction Diode Based on Heated Magnesium Implantation and High Temperature Annealing

摘要

In this paper, we studied p-type GaN materials formed by Mg ion implantation at elevated temperature and thermal annealing. SIMS analysis and electrical test are used to evaluate the p-GaN layer performance. By applying the optimized ion implantation and annealing condition, a lateral P-N junction diode is realized on GaN-on-Si substrate. The device demonstrates breakdown voltage 135V(Ioff=1μA) and forward current density 191mA/cm~2 at 50V when characterized at 200°C.