The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films

摘要

Polyaniline, ZnO and polyaniline/ZnO nanocomposite thin films are coated on glass substrates using the spray pyrolysis technique. The samples are characterized by the XRD, SEM, EDAX, UV-Vis and I - V characteristics. The XRD analyses confirm that the spray-coated polyaniline and ZnO thin films have orthorhombic and hexagonal structures, respectively, and optical bandgap energy decreases from 3.81 to 3.41 eV with the addition of a Zn atom. SEM analysis of the polyaniline/ZnO nanocomposite thin films shows that there is an agglomeration of ZnO particles with uniform distribution in the polyaniline matrix, and the diode characteristics of the polyaniline/ZnO nanocomposite show weak rectification behavior. Parameters such as the ideality factor, reverse saturation current and barrier height are calculated from the I - V characteristics.