首页> 外文会议>Annual meeting of the American Society for Precision Engineering >CHARACTERIZING RESIDUAL STRESS IN SCRIBES ON SILICON USING DEFLECTION MEASUREMENTS
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CHARACTERIZING RESIDUAL STRESS IN SCRIBES ON SILICON USING DEFLECTION MEASUREMENTS

机译:使用偏转测量来表征硅涂层的残余应力

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The bend angle generated due to scribing is on order of arc sec per scribe depending on load applied to the tip. The deflection appears to increase linearly for scribes with minimal fracture, but hasn't shown to be repeatable for specific values of bend angle with similar applied loads. For worn tips bend angle drops dramatically (an order of magnitude) at certain point "threshold." Raman measurements yielded no sign of phase transformation within the scribe regions for both Dynatex and Vickers geometries, contrary to what was anticipated by the authors. This is still being investigated. Work continues with using dead-weight loading to create scribe traces with better experimental procedure that aim to improve current data and repeatability. The bend effect model used to correlate sample deflection to an estimate of residual stress within the scribe trace is being tailored to this investigation. Indenting experiments are currently underway to reproduce the experimental findings of others and gain better insight into the lack of Raman data indicating the expected phase transformations within the scribe region. Under development is a piezo-actuator driven indenting apparatus. This will aid in performing controlled indents and load
机译:由于划线而产生的弯曲角度是根据施加到尖端的负载的矩阵的弧形SEC的顺序。偏转似乎是线性增加的,对于具有最小裂缝的划线,但没有显示用于具有类似应用负载的弯曲角度的特定值的可重复的。对于磨损的尖端,弯曲角度在某些点“阈值”处急剧下降(幅度级)。拉曼测量在Dynatex和Vickers几何形状中没有在划线区域内变换的迹象,与作者预期的相反。这仍然正在调查。工作继续使用死重装载来创建具有更好的实验程序的划线迹线,旨在提高当前数据和可重复性。用于将样品偏转相关的弯曲效果模型在划线轨道内与残余应力估计进行了调查。目前正在进行缩进实验来重现他人的实验结果,并更好地了解缺乏划线区域内的预期相变的拉曼数据。在开发中是一种压电致动器驱动的凹进装置。这有助于执行受控缩进和负载

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