Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics

摘要

With account of the integrated optoelectronics global trends including intensive search of new monocrystalline, polycrystalline amorphous and polymer media review is presented for the present state and development trends of light emitters (light emitting diodes (LED's), laser diodes (LD's)) and photodetectors based on heterostructures in In-Ga-N alloy system. It's shown that in accordance with theoretical calculation MOCVD-grown heterostructures based on In-Ga-N alloy system can be used for the photodetectors fabrication with photocurrent gain up to 10~6 as well as for high-efficiency LED's (with luminous intensity more than 1 cd and short wavelength LD's fabrication needed for optical storage system. Advantages and drawbacks of these devices are analyzed. Experimental data are presented on the electroluminescent and photoelectric characteristics of devices based on In-Ga-Al-N system. It's supposed that statistical disorder in allay system leads to general broadening of luminescence and photosensitive spectra as well as to the smearing of optical nonlinearities that should be observed in quantum-confined system. In it's turn it's shown that statistical disorder manifestation can be related to peculiarities of MOCVD synthesis due to lattice mismatched growth and sharp nonlinear composition dependence on gaseous medium composition.