Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentration

摘要

Beyond the range of standard quasi-neutrality approximation dependence of photoelectric gain coefficient G on two-level recombination centers concentration N and applied electric field strength E_0 is studied. Model: inter-band homogeneous absorption of weak radiation, acceptor type of recombination centers, extracting current contacts. The physical interpretation of the results obtained is given.