The Properties of Schottky-Barrier Photodiodes Based on Cd_xHg_(1-x)Te with Tunnel Transparent Dielectric

机译：基于CD_XHG_（1-X）TE的肖特基阻隔光电二极管与隧道透明电介质的特性

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The results are presented on the basis of characteristics of p-type CdHgTe (CMT) diodes with metal -tunnel transparent dielectric - semiconductor (MTTD photodiodes) in the 8-11 μm spectral range.

机译：结果是基于在8-11μm光谱范围内具有金属-Tunnel透明介电 - 半导体（MTTD光电二极管）的P型CDHGTE（CMT）二极管的特性。

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《International conference on photoelectronics and night vision devices》|2003年||共6页
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V. Damnjanovic; V. P. Ponomarenko; SPIE-The International Society for Optical Engineering;
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4. The Properties of Schottky-Barrier Photodiodes Based on Cd_xHg_(1-x)Te with Tunnel Transparent Dielectric [C] . V. Damnjanovic, V. P. Ponomarenko, SPIE-The International Society for Optical Engineering International conference on photoelectronics and night vision devices . 2003

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The Properties of Schottky-Barrier Photodiodes Based on Cd_xHg_(1-x)Te with Tunnel Transparent Dielectric

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