Femto-attosecond photoelectronic imaging (the present state of the art and new trends)

摘要

Basic advantages and limitations of ultrafast photoelectronic imaging are overviewed. Presented are recent experimental results on recording of Ti: sapphire laser radiation with 200-fs time resolution and 30-line pairs/mm spatial resolution. Some peculiarities in displaying of ultrafast optical events onto the photocathode with femtosecond precision are shortly mentioned. Special emphasis is given to creation of ultra high (10-100kV/mm) electrical field strength nearby the photocathode surface, as well as to manufacturing various types of femtosecond image converter tubes. To break the femtosecond barrier, a new technique for generation the attosecond bunches of tens keV electrons in quasistationary electromagnetic fields is proposed.