Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photo-resistors)

摘要

It is demonstrated in theory that saturation of the photoelectric gain G with increasing voltage V across a sample can be suppressed by introducing a vary-band layer near a current contact toward which the minority charge carries are pulled by the electric field. Inter-band mechanisms of photo-generation and recombination of non-equilibrium carriers are supposed. This is realized, for instance, in CdHeTe-based materials widely used for detecting weak optical radiation in the wavelength intervals of λ = 8-12 μm and λ = 3-5 μm (see Ref. 1).