Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg_(1-x)Cd_xTe under ion-beam milling

摘要

An analysis of the relaxation process for cation defects in Hg_(1-x)Cd_xTe that form in the thermal spike at ion-beam milling (IBM) taking into account the neutral mercury bi-vacancies has been performed. It has been enabled to define a correct expression for concentration of the interstitial mercury created at IBM in the mercury diffusion source that is a boundary condition for equations of the diffusion kinetics. Expressions for depth of the p-n conductivity type conversion in both vacancy-doped p-Hg_(1-x)Cd_xTe and one doped with As, Sb were obtained. There was a good accord between computed dependence of the conversion depth on the ion dose for vacancy-doped Hg_(1-x)Cd_xTe (x≈0.2) with available literature experimental data. This fact well confirm the model adequacy.