Suppression of bias- and temperature-dependent conductance by gate-voltage in multi-walled carbon nanotube

摘要

We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration. The four-terminal measurement indicates that the ambipolar behavior is originated from an intrinsic conductivity of MWNT. power-law behaviors, in temperature- and bias-dependent conductance, disappeared when a high gate voltage is applied, and conductance become temperature- and bias-independent. This result indicates an occurrence of gate-induced transformation from the unconventional to the normal metallic states in MWNT.