ELECTRON EMISSION FROM CVD DIAMOND FILM DEPOSITED OP PRE-SEEDED SI SUBSTRATE WITH LARGE AREA AND LOW INTERFACE STATE DENSITY

摘要

Diamond films can show a stable planar electron emission property at low electric field because of its low or even negative electron affinities (NBA), low work function, high thermal conductivity, as well as chemical and physical robustness and be manufactured cheaply [1]. A considerable research effort on diamond field emission has been made in the past decade, even if there are no obvious mechanisms by which electrons can be transported through the bulk diamond film to the surface states and how to obtain stable electron emission [2]. Specially, the interface between the diamond film and substrate can also play an important role in enhanced emission by means of the enhanced electron injection from substrate into diamond bulk [3]. It is necessary to further study on theory and experiment for developing a stable and efficient diamond planar display device.