Bridging the Gap between Classical and Quantum Transport in Nanoscale MOSFETs: Schrodinger Equation Monte Carlo-ID

摘要

As MOSFET channel lengths approach the nanoscale, the reliability of semi-classical models of transport decreases. However, we have not yet, nor perhaps ever will we, reach the point where effects related to scattering such as mobility degradation and electrostatic screening can be neglected. To offer additional insight into transport phenomena in these deeply scaled devices, simulation tools that treat quantum transport without sacrificing the realistic treatment of scattering are needed. In recent years we and collogues have been developing a unique non-equilibrium Green's function approach "Schrodinger Equation Monte Carlo" (SEMC) that provides a physically rigorous approach to quantum transport and phase-breaking inelastic scattering via real (actual) scattering processes such as optical and acoustic phonon scattering. Quasi-one-dimensional SEMC codes previously have been applied to model transport in systems such as quantum well lasers where the potential varies only along the nominal direction of transport, although with a fully three-dimensional (3D) treatment of scattering. In this paper, the development of a "SEMC-2D" code for electrostatically self-consistent treatment of quantum transport within devices with, additionally, quantum confinement normal to the direction of transport, is reported along with illustrative simulation results for nano-scaled SOI MOSFETs geometries.