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INTERLAMINAR SHEAR STRENGTH OF C-SIC BASED COMPOSITES REINFORCED WITH HEAT TREATED CARBON FIBERS

机译:用热处理碳纤维加固C-SiC基复合材料的Interlamar剪切强度

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Carbon fiber reinforced C-SiC based composites (C/C-SiC) are potential materials for the application of high-performance structures. Among many fabrication techniques for C/C-SiC composites, the liquid silicon infiltration (LSI) process is an attractive one because of its near-net shaping technique and good performance/cost benefits [1-4]. The manufacturing of C/C-SiC composites via the LSI process consists of three steps: (i) manufacturing of carbon fiber reinforced plastic (CFRP) green body; (ii) obtaining of porous C/C preform by converting polymer matrix into carbon at temperatures above 900 °C (carbonization step); (iii) fabrication of C/C-SiC composite through the liquid silicon infiltration into the C/C preform to form SiC matrix (siliconization step). At the different steps, the material shows a very different morphology. Especially, at the carbonization step, the shrinkage of the resin matrix caused by the evolution of gaseous products exhibiting a volume reduction of more than 50% is hindered by the stiff fiber. This leads to an extensive formation of network of both pores and cracks in the carbon matrix. During the siliconization step, the pores and cracks essentially act as the channel for the liquid silicon climbing into the inner parts being reacted with the carbon matrix or fiber to form the silicon carbide. Eventually, the matrix of C/C-SiC composites fabricated in such way includes amorphous carbon, silicon carbide and a small amount of residual silicon [2].
机译:碳纤维增强的C-SiC基复合材料(C / C-SiC)是应用高性能结构的潜在材料。在C / C-SiC复合材料的许多制造技术中,液体硅渗透(LSI)工艺是一种吸引力的,因为其近净的成型技术和良好的性能/成本效益[1-4]。通过LSI工艺制造C / C-SiC复合材料,包括三个步骤:(i)碳纤维增强塑料(CFRP)生坯的制造; (ii)通过将聚合物基质转化为900℃以上的温度(碳化步骤)来获得多孔C / C预制件; (iii)通过液体硅浸润将C / C-SiC复合物的制造成C / C预制件以形成SiC基质(硅化步骤)。在不同的步骤中,材料显示出非常不同的形态。特别是,在碳化步骤中,通过抗纤维阻碍了由呈现大于50%的体积减少超过50%的气态产物的进化引起的树脂基质的收缩。这导致碳基质中的孔隙和裂缝的广泛形成。在硅化步骤期间,孔和裂缝基本上充当液体硅爬进内部的通道与碳基质或纤维反应以形成碳化硅。最终,以这种方式制造的C / C-SiC复合材料的基质包括非晶碳,碳化硅和少量残留硅[2]。

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