Many-particle interaction in the tunnelling nanostructures and STM/STS measurements

摘要

The influence of many-particle interaction on tunnelling characteristics in low dimensional structures is analyzed theoretically and investigated experimentally by means of STM/STS methods. It is shown that indirect interaction (trough band states of semiconductors) can often lead to increased tunnelling conductivity for bias range where the direct interaction between impurity states is not significant. New method for preparation of electronic states with definite spin configuration on neighboring atoms is suggested. The energy splitting of opposite spin electrons can be about 0.5-1 eV. The different types of tunnelling conductivity behavior in ultra small junction with superconductors is analyzed.