High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

摘要

High gain of submonolayer quantum dots allowed us to use broad waveguide design typical for high power lasers based on QWs. It resulted in the realization of high power operation of 6 W with the peak conversion efficiency of 58% and a characteristic temperature of 150 K in 100 μm-wide diode lasers based on SML QDs. The maximum output power was limited by COMD whereas thermal rollover was found to be negligibly small. These lasers are slightly inferior to the QW-lasers fabricated in this work whose characteristics are among of the best reported for QW lasers. These results demonstrate the potential of submonolayer technique to form active region of high power laser.