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PREPARATION AND CHARACTERIZATION OF IONIC CONDUCTOR Bi_(23)V_4O_(44.5)

机译:离子导体Bi_(23)V_4O_(44.5)的制备和表征

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Bi_(23)V_4O_(44.5) was synthesized by solid state reaction and via ball milling process. In ball milling process, high-density, fine-grained powders with uniform grain-size distribution were obtained. Rietveld refinement results on powder data showed that Bi_(23)V_4O_(44.5) crystallized in the triclinic system, space group P-1, with cell parameters at room temperature, a = 11.570(5)A, b = 11.543(5)A, c = 20.638(7)A, α = 76.46(3)°, β = 87.69(4)°, γ = 119.98(3)°. Impedance data shows that the material is a good ionic conductor with conductivity as high as 1.34 x 10~(-4) ohm~(-1) cm~(-1) at 300°C. A phase transition was also observed at ~180°C. The existence of grain boundary effect was observed in Bi_(23)V_4O_(44.5), which could not be eliminated in dense material preparation via ball milling process. The discrepancy of electrical behavior in the materials prepared via solid state reaction and ball milling process was investigated. Further characterization using high precision inductance/capacitance/resistance (LCR) meter, differential thermal analysis (DTA), thermogravimetric analysis (TGA) and Scanning Electron Microscopy (SEM) were carried out.
机译:通过固态反应和通过球磨过程合成Bi_(23)V_4O_(44.5)。在球铣过程中,获得高密度,细粒粉末,具有均匀的晶粒尺寸分布。粉末数据的RIETVELD细化结果表明,在三星系统,空间组P-1中结晶的BI_(23)V_4O_(44.5),室温下的细胞参数,a = 11.570(5)A,B = 11.543(5)A. ,C = 20.638(7)A,α= 76.46(3)°,β= 87.69(4)°,γ= 119.98(3)°。阻抗数据表明,该材料是良好的离子导体,电导率高达1.34×10〜(-4)欧姆〜(-1)cm〜(-1),在300℃下。还在〜180℃下观察到相转变。在Bi_(23)V_4O_(44.5)中观察到晶界效应的存在,这不能通过球磨过程以致密材料制备消除。研究了通过固态反应和球磨过程制备的材料中电能的差异。采用高精度电感/电阻(LCR)仪表,差分热分析(DTA),热重度分析(TGA)和扫描电子显微镜(SEM)进一步表征。

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