The general trend of the 45 nm VLSI technology is to use conductors of lower resistivity and dielectric materials with lower dielectric constant. The introduction of the new materials causes new problems to the defect performance of the Copper CMP process. The major types of Copper CMP defects include corrosion, residue, scratches, and water marks. This paper presents the most efficient method of the post-CMP process. By using resin particles as the cleaning solution of post-CMP, water marks can be quite controlled. Moreover, by including resin particles in some post CMP cleaners, they are effective in the post-CMP process with superior performance in various dielectrics (for example thermal SiO2, SiOC and low-k dielectrics etc.). Therefore, the residues of resin particles are easily removed on the patterned wafer surfaces perfectly. In addition, a mechanism forming water marks is proposed. By reason that the resin particles act as a chelating function, and add the affect of physical force, an excellent performance for the post-CMP process is achieved.
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