CMP Profilometry with Carbon Nanotube Probes

摘要

The progression of leading edge semiconductor fabrication technology to smaller linewidths has placed new demands on traditional metrology techniques. For sub-65nm devices in particular, the CMP process metrics, dishing and erosion, require performance improvements in both measurement resolution and accuracy. In this paper we evaluate a novel technique utilizing AFM long-scan profilometry in conjunction with high-resolution carbon nanotube probes, and compare their performance with traditional TESPA, etched-silicon probes. This combination can extend and sustain the large data-sampling requirements of profilometry as device features continue their downward scaling.