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Evaluation f a Rapid Prototyping Process for Silicon Microstructures

机译:评估F用于硅组织的快速原型工艺

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During the last decade rapid prototyping has made a tremendous success in almost every branch of industrial fabrication. Almost every article of today's life is pre-fabricated in a rapid process during its design. Functional rapid prototypes represent an increasing share, as they allow realistic functional tests of a component in an early stage of development. MEMS technology is still at the beginning of the rapid prototyping area. Up to now, only a few conventional techniques, like stereolithography, have been downscaled to create rapid microrototypes with a limited choice of materials and geometries. Rapid prototyping of silicon is completely out of reach today. In this paper we propose a micro rapid prototyping concept for functional silicon microstructures. The process combines laser technology with standard processes of silicon microstructuring and has been evaluated with a metal-silicon layer system. First, noble metal is vapour deposited on top of a silicon wafer. The metal is subsequently structured with a laser, thus creating a mask, which can be transferred into the silicon by standard chemical etching procedures like KOH-etch. The advantage of this concept is that the time-consuming photomask generation is omitted completely, as the laser can be guided with CAD data. Moreover, the standard structuring process gives the opportunity to gain a microstructure with features equivalent to the final component. With laser ablation and KOH-etch two process steps are being carried out subsequently, which are inevitably linked to each other. Depending on the energy of the laser irradiation the ablation performance changes and, with it, the minimal structure width and the thermal melting zone at the edges of the mask openings. If the energy density is too high the crystalline structure of the silicon is destroyed by heat transfer and heat conduction. Hereby the anisotropic etch resistance is lost, which influences the following KOH-each process. At the current state the process is monitored and optimised for different values of laser energy density. In this progress report the optimisation and the principal feasibility will be shown with simple micromechanic and microfluidic structures.
机译:在过去十年中,快速的原型设计在几乎所有工业制造的分支中都取得了巨大成功。几乎每篇一系列生命的一篇文章都在设计期间在快速过程中预先制造。功能性快速原型代表份额的增加,因为它们允许在发育早期阶段的组件的现实功能测试。 MEMS技术仍处于快速成型区域的开头。到目前为止,只有几种传统技术,如立体刻录,已被缩小以创建快速微旋屏,其中有限的材料和几何形状。今天的硅的快速原型出现完全遥不可及。在本文中,我们提出了一种用于功能性硅微结构的微快速原型概念。该方法将激光技术与硅微结构的标准过程相结合,并通过金属硅层系统进行了评估。首先,贵金属是​​沉积在硅晶片顶部的蒸气。随后用激光构成金属,从而产生掩模,其可以通过标准的化学蚀刻程序如KOH蚀刻转移到硅中。该概念的优点是完全省略耗时的光掩模生成,因为激光可以用CAD数据引导。此外,标准结构化过程赋予有机会利用与最终组件相同的特征的微观结构。随后进行激光消融和KOH蚀刻两个工艺步骤,其不可避免地彼此连接。根据激光照射的能量,消融性能变化,并且在掩模开口的边缘处的最小结构宽度和热熔区。如果能量密度太高,则硅的晶体结构被热传递和热传导破坏。因此,各向异性蚀刻性损失,影响以下KOH-每种方法。在当前状态下,监测该过程并针对不同的激光能量密度值进行优化。在此进度中,报告优化和主要可行性将以简单的微机理和微流体结构显示。

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