Low charging damage SiO{sub}2 etching with a low-angle forward reflected neutral beam

摘要

In this study, energetic reactive radical beams were formed with SF{sub}6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO{sub}2 and possible damage induced by the radical beam were investigated. The results showed that when SiO{sub}2 was etched with the energetic reactive radical beams generated with SF{sub}6, SiO{sub}2 etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no charging damage could be found.