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Photovoltaic Solar Electricity: State of the Art and Future Prospects

机译:光伏太阳能电力:最先进的前景和未来的前景

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We review here the technical progress made in the past several years in the area of single- and polycrystalline thin film PV (photovoltaic) technologies based on Si, III-V, II-VI and I-III-VI{sub}2 semiconductors. PV electricity is one of the most options identified for sustainable providing of future energy requirements of the world. At the moment PV market is growing very rapidly by 30-40 % each year like telecommunication and computers. PV production was 520 MW in 2002. Si and GaAs single crystalline solar cells performed high efficiency very closed to theoretically predicted maximum value. Single-and polycrystalline Si solar cells still remain the predominant PV technology at the present. The cost of these solar cells is rather high (USD 3.5-4.5). Thin film PV was developed as a means of substantially reducing the cost of solar cells. Remarkable progress has been achieved in this field for recent years. CdTe and Cu(In, Ga)Se{sub}2 thin film solar cells performed a record efficiencies of 16-17% and 18-19% respectively. These values are highest for thin film solar cells. The thermodynamic limit of the solar energy conversion to electricity is 93-95%. This goal can be achieved on thin film quantum well solar cells.
机译:我们在这里审查了在过去几年的技术进展,基于Si,III-V,II-VI和I-III-VI {Sem} 2半导体的单晶薄膜PV(光伏)技术领域。光伏电是为可持续提供世界未来能源需求而确定的最多选项之一。目前,光伏市场每年都在电信和计算机等每年增长30-40%。 PV产量为2002年520兆瓦。Si和GaAs单晶太阳能电池在理论上预测的最大值上非常缩小。单晶硅Si太阳能电池仍然是目前的主要光伏技术。这些太阳能电池的成本相当高(3.5-4.5美元)。薄膜PV被开发为显着降低太阳能电池成本的方法。近年来这一领域取得了显着进展。 CdTe和Cu(In,Ga)Se {sub} 2薄膜太阳能电池分别进行了16-17%和18-19%的记录效率。这些值对于薄膜太阳能电池最高。太阳能转换为电力的热力学限制为93-95%。该目标可以在薄膜量子阱太阳能电池上实现。

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