Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

摘要

This paper describes a scalable threshold voltage model for the entire range of drawn length and width, considering important short-channel, reverse short-channel, narrow-width, and inverse narrow-width effects using a unified effective channel doping. The model has a simple compact form that can used to characterize advanced deep-submicron devices with halo-implanted MOSFET. The model has been verified with the experimental data from 0.18-μm CMOS shallow trench isolation technology wafer.