机译:短沟道FinFET的解析统一阈值电压模型及实现
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
rnDepartment of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
rnDepartment of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
rnDepartment of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
rnDepartment of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
rnIMEP, MINATEC, Parvis Louis Neel, 38054 Grenoble Cedex 9, France;
rnIMEP, MINATEC, Parvis Louis Neel, 38054 Grenoble Cedex 9, France;
Double-gate FinFETs; Tri-gate FinFETs; Threshold voltage;
机译:改性双级FINFET中反转电荷和阈值电压的量子分析建模(BL-FINFET)
机译:具有垂直高斯掺杂分布的短沟道薄型全耗尽绝缘体上硅MOSFET的电势和阈值电压的解析模型
机译:带局部电荷的绝缘体上硅锗金属氧化物半导体场效应晶体管上短沟道应变硅阈值电压的解析模型
机译:具有反向短通道和逆窄宽效应的统一长度/宽度相关的阈值电压模型
机译:45 nm栅极长度n-MOSFET陷阱引起的阈值电压波动仿真的比较分析和分析模型预测。
机译:计算通用通用生存阈值模型(GUTS)的新算法的高效计算实现
机译:硅锗(SiGe)衬底上带有应变硅(s-Si)沟道的短沟道双材料栅极(DMG)MOSFET阈值电压的分析模型