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Semi-Analytic Boltzmann Equation Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

机译：具有轻质掺杂漏斗的短通道MOSFET基板电流的半分析Boltzmann型号

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This paper presents a new technique for obtaining practical formulae for the impact ionization (Ⅰ.Ⅰ.) generation rate (G_(ⅱ)) in ultra-short-channel Lightly Doped Drain (LDD) MOSFFTs. A new formulae for the substrate current (Ⅰ_(sub)) is developed.

机译：本文提出了一种用于获得冲击电离的实际公式的新技术（Ⅰ.Ⅰ.Ⅰ.）在超短通道轻掺杂漏极（LDD）MORFFTS中的产生率（G_（Ⅱ））。开发了基板电流的新公式（Ⅰ_（Ⅰ℃）。

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《Nanotechnology conference and trade show》|2003年||共4页
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1. Short-channel drain current model for asymmetric heavily/lightly doped DG MOSFETs [J] . PRADIPTA DUTTA, BINIT SYAMAL, KALYAN KOLEY, Pramana . 2017,第2期

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2. Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs [J] . Mini Bhartia, Arun Kumar Chatterjee Journal of Semiconductors . 2015,第4期

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3. A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs [J] . Dutta Pradipta, Syamal Binit, Koley Kalyan, Journal of computational and theoretical nanoscience . 2015,第9期

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4. Semi-Analytic Boltzmann Equation Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains [C] . Nanotechnology conference and trade show . 2003

机译：具有轻质掺杂漏斗的短通道MOSFET基板电流的半分析Boltzmann型号
5. The substrate current model due to hot carrier effect for submicron MOSFET devices. [D] . Liao, Ke-Kung. 2001

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6. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

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7. Substrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 Nm Process Using Physical Models [O] . Sharma, Sanjay, Yadav, R. P, Janyani, Vijay 2016

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8. Modified Lightly Doped Drain Structure for VLSI (Very Large Scale Integration) MOSFET's [R] . Bampi, S., Plummer, J. D. 1986

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Semi-Analytic Boltzmann Equation Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

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