Accurate modeling for RF Silicon MOSFET up to 15 GHz and the parameter extraction methodology

摘要

The accurate method to extract a small-signal subcircuit model of MOSFET's based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are shown. The procedure of the parameter extraction for RF model is discussed and verified by experiment. The excellent correspondence is achieved between the modeled and measured S-parameters up to 15GHz for 0.18um CMOS process technology.