Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs

摘要

This paper presents a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density and field distributions. The combination of both models correctly describes the effects of hole inversion layer quantization on threshold voltage and current without increasing the computation time. The IMLDA model agrees well with results of the self-consistent solution of Schroedinger and Poisson equations (SE/PE) for a wide range of temperatures and doping concentrations. The new mobility model is compatible to the IMDLA quantum corrected charge densities and agrees well with experimental mobility data within the same range of temperatures and doping densities. A big advantage of the IMLDA model and the new mobility model is their low computational cost and their numerical robustness, because both depend only locally on field, doping and temperature.