Physical Modeling of Substrate Resistance in RF MOSFETs

摘要

A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 μm MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances on the device geometry is also presented. The substrate signal coupling effect on the small-signal output admittance and its gate-bias dependence are analyzed.