Compact bipolar transistor modeling - Issues and possible solutions

摘要

Recently, several advanced compact bipolar transistor models have become available to the design community. For existing technologies, these models (and their internal formulation) are believed to offer sufficient flexibility and accuracy, especially compared to the existing SPICE-Gummel-Poon model (SGPM). Thus, the goal of this paper is an assessment of general unresolved bipolar transistor modeling issues and possible solutions that are important especially for circuit design.