The quaternary Sb-based materials are attractive for use in TPV devices due to the versatility associated with being able to grow InGaAsSb and AlGaAsSb material with a wide range of band gaps lattice matched to a GaSb substrate. Photodiodes (0.60 eV) consisting of an InGaAsSb p/n junction grown on GaSb were fabricated and characterized to establish baseline electrical performance of the material. In order to fabricate monolithic interconnected modules (MIMs) from these photodiodes using a conductive GaSb substrate, an electrical isolation layer must be added between the active layers and the substrate. For this purpose, AlGaAsSb cell isolation diodes (CIDs) were developed and characterized with respect to their ability to block current in reverse bias. These structures were combined in the first MIM structures grown and fabricated from Sb-based materials on GaSb substrates.
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机译：季armary的SB基材料对于TPV器件具有吸引力，因为与能够将InGaAsb和藻类材料的多功能性与匹配的煤气基板匹配的宽带间隙晶格相关联。由在Gasb上生长的InGaAssb P / N结组成的光电二极管（0.60eV）制造并表征以建立材料的基线电性能。为了使用导电气体基板制造从这些光电二极管的单片互连模块（MIMS），必须在有源层和基板之间添加电隔离层。为此目的，开发出藻类细胞隔离二极管（CID），并相对于它们阻断反向偏压的电流的能力。这些结构在生长的第一个MIM结构中组合并由基于SB基材料制成的GASB基板。
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