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Development of front surface, spectral control filters with greater temperature stability for thermophotovoltaic energy conversion

机译:前表面的开发,具有较高温度稳定性的光谱控制过滤器,用于热敏电极转换

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Spectral control is an important consideration in achieving high conversion efficiency with thermophotovoltaic, (TPV) energy conversion systems [1]. TPV modules using front surface filters as the primary spectral control device have demonstrated conversion efficiencies in excess of 20% [2] with power densities in excess of 0.4 W/cm2. The front surface filter we are developing is a short pass, long wavelength reflection filter consisting of an interference filter deposited on a plasma filter. The materials used in the interference filter must exhibit high broad band transmission and good film quality and sufficient temperature stability at the operating temperature of the TPV cells and over any potential temperature excursions that may occur. Three high refractive index materials that offer good potential for use in TPV spectral control filters are antimony sclenide (Sb2Se3), antimony sulfide (Sb2S3), and gallium telluride (GaTe). The highest spectral efficiency has been demonstrated using Sb2Se3; however this material develops significant near infrared (NIR, 0.72-2.5 mu m) absorption at temperatures in excess of 90 degrees C. The other two materials are being developed as high temperature alternatives to Sb2Se3. TPV filters using GaTe and Sb2S3 have been designed and fabricated, and initial results indicate that GaTe based filters are capable of operation at temperatures of 150 degrees C or greater. Measured performance of TPV filters containing Sb2Se3, GaTe and Sb2S3 are presented, along with the impact that these have on TPV module performance.
机译:光谱控制是实现高转化效率的重要考虑因素,具有蒸发器(TPV)能量转换系统[1]。使用前表面滤波器作为主光谱控制装置的TPV模块已经证明了超过20%[2]的转化效率,功率密度超过0.4W / cm 2。我们正在开发的前表面滤波器是短通,长波长反射滤光器,由沉积在等离子体过滤器上的干涉滤光器组成。干涉滤光器中使用的材料必须在TPV电池的工作温度和可能发生的任何潜在温度偏远的情况下表现出高宽带传输和良好的薄膜质量以及足够的温度稳定性。提供良好的用于TPV光谱控制过滤器的良好潜力的高折射率材料是锑钪(Sb2se3),硫化物硫化物(Sb2s3)和碲化镓(栅极)。使用SB2SE3证明了最高光谱效率。然而,这种材料在超过90℃的温度下显着的近红外(NIR,0.72-2.5μm)吸收。其他两种材料正在作为SB2Se3的高温替代品开发。使用栅极和SB2S3的TPV过滤器已经设计和制造,初始结果表明基于栅极的滤波器能够在150摄氏度的温度下操作。呈现了含有SB2Se3,栅极和SB2S3的TPV过滤器的测量性能,以及这些对TPV模块性能的影响。

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