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Preliminary Study Towards the EMI-Induced Bit-Flips Prediction for COTS Microprocessors

机译:初步研究对COTS微处理器的EMI诱导的位翻转预测

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The main thrust of this paper is to propose a general analysis involving conducted electromagnetic interference (EMI) at the processor power bus and the occurrence of bit-flips (soft-errors) in its memory elements. At the final end, we aim at accurately predicting EMI-induced bit-flips in commercial-off-the-shelf (COTS) microprocessors by means of pin-level fault injection. An in-depth experiment based on the MSP430F149-Texas Microcontroller has been carried out in order to understand the relationship between EMI-noise affecting processor power bus and the number of induced bit-flips in the processor memory elements. For this experiment, we have inspected the embedded RAM used to store application data as well as control state variables. This RAM also serves as stack area for the control part. The EMI consequences in terms of bit-flips have been considered for different levels of EMI. The set of EMI levels is defined according to the International Standard Normative IEC 61000-4-29, which rules test setup and test procedures for certificating DC-low power supplied electronics with respect to conducted EMI noise throughout its power-lines. For the proposed work, we have used a home-tailored Std. IEC 61000-4-29 test-compliance EMI generator to inject noise into the processor power lines. The obtained results are very promising and point towards a modeling to predict conducted EMI-induced bit-flips in processor memory elements.
机译:本文的主要推力是提出涉及在处理器电源总线上进行电磁干扰(EMI)的一般分析,并在其存储元件中发生位翻转(软误差)。在最后,我们的目的是通过引脚水平故障注入准确地预测商业现成的架子(COTS)微处理器中的EMI诱导的位翻转。已经执行了基于MSP430F149-TEXAS微控制器的深度实验,以便了解EMI噪声影响处理器电源总线的关系和处理器存储器元件中的感应位翻转的数量。对于此实验,我们已检查用于存储应用数据以及控制状态变量的嵌入式RAM。该RAM还可作为控制部分的堆栈区域。对位翻转方面的EMI后果已被考虑用于不同级别的EMI。根据国际标准规范IEC 61000-4-29定义了一组EMI水平,该规则测试设置和测试程序在整个电源线上相对于在其电源线上进行的EMI噪声进行证书。对于拟议的工作,我们使用了一个家庭量身定制的STD。 IEC 61000-4-29测试符合性EMI发生器将噪声注入处理器电源线。获得的结果非常有前途和指向建模,以预测在处理器内存元件中进行的EMI诱导的位翻转。

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