Modeling of Homoepitaxy on (100)-oriented Surface of Porous Silicon Layer

摘要

Monte Carlo simulation was used for study of the initial stage of Si on porous Si epitaxy. Fractal morphology of PS layer was taking into account. The main changes during the homoepitaxy are shown to occur near the subsurface area of porous layer and include the formation of pendant layer over pores and the decrease in surface roughness.