About Application of a Spectral Method for in Situ of Measurement of Silicon Etch Rate in CCl{sub}2F{sub}2/O{sub}2 Plasma

摘要

The physical basis of a method optical actinometry are considered. The preliminary outcomes of research of the rate sensor of etching of a emission-spectral type are adduced. The linear dependence of etch rate of single-crystal silicon from a current of the sensor is obtained.