Amorphous Transparent Conducting Oxides (TCOS) Deposited at T 驴 100 掳C

摘要

We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at T_sles100degC. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100degC in argon, a broad maximum in the as-deposited conductivity is found for x~ 0.55 to 0.85 in In_xZn_1-xO_y with sigma_max ap3000 Omega-1-cm-1 for xap0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ~0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600degC in either air or argon