High-speed deposition of SiC thick film by halide precursor

摘要

Polycrystalline P-SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl_4 + CH4 and H_2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (R_deP) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing T_deP. The maximum deposition rate (R_deP) of 1125 μm IT~(-1) has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing R_deP