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Investigation of Electroplated Ni and Ni-Cu alloy UBM (Under Bump Metallurgy) with Lead-Free Solders for Flip Chip Packages

机译:用于倒装芯片封装的无铅焊料电镀Ni和Ni-Cu合金UBM(凹凸冶金下)的研究

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Lead-free solder bumping in the flip chip interconnections is one of the key issues for the high density and environmentally friendly IC chip packages. The design of UBM (under bump metallurgy) structure and materials is also important, when we take the interaction with solders and the reliability problems into account. In order to use tin-rich, lead-free solders, Ni is one of the most promising candidate materials to replace Cu in the UBM systems. However, the Ni metallizations often have high stresses which may cause the peeling off of the films or Si chip cratering. In the present paper, electroplated Ni or Ni-Cu alloy UBM/Sn-3.5Ag solder systems were investigated focusing on the stress of the UBM and interfacial reactions between the UBM and the solder. After the sputtering of the adhesion and the seed layers, Ni or Ni-Cu alloys were electroplated on Si wafers, and the electroplating conditions were varied to make deposits of various alloy compositions. Residual stresses of Ni UBMs were reduced with increasing the plating temperatures and decreasing the current density. Cu alloying in the Ni layers reduced the stress of the UBM but accelerated the interfacial reaction with lead-free solders. To reduce the stress of the UBM, Cu/Ni-Cu double layer UBM was introduced by the step electroplating method in a single bath, in which the Cu acted as a cushion layer.
机译:倒装芯片互连中的无铅焊料是高密度和环保IC芯片封装的关键问题之一。当我们考虑与焊料的互动和可靠性问题时,UBM(凹凸冶金)结构和材料的设计也很重要。为了使用富含锡,无铅焊料,Ni是替代UBM系统中最有前途的候选材料之一。然而,Ni金属化通常具有高应力,这可能导致薄膜或Si芯片升降机的剥离。在本文中,研究了电镀Ni或Ni-Cu合金UBM / Sn-3.5Ag焊料系统,其关注UBM和UBM和焊料之间的界面反应的应力。在粘附和种子层的溅射之后,在Si晶片上电镀Ni或Ni-Cu合金,并且电镀条件变化以制备各种合金组合物的沉积物。随着电镀温度的增加并降低电流密度,降低了Ni UBM的残余应力。 Ni层中合金化的Cu合金化降低了UBM的应力,但加速了与无铅焊料的界面反应。为了减少UBM的应力,通过步进电镀方法在单个浴中引入Cu / Ni-Cu双层UBM,其中Cu用作缓冲层。

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