Hermetically Sealed Glass Packages

摘要

Significant advances have been accomplished in the field of Through Glass Via (TGV) technology; enabling a new generation of electronic designs that achieve higher performance, while leveraging low cost system solutions. Through-hole creation methods in glass have been optimized for mass production with consistent via diameter, shape and wall chemistry/morphology. This has enabled the development of unique copper via metallization materials that exhibit very high conductivity, thermal expansion matching (with borosilicate glass) and hermeticity in the 10E-10 Atm.cc/sec range (Ultra-High Vacuum Hermeticity). Further developments in Chemical Mechanical Polishing (CMP) for glass wafers with copper vias, surface sensitization and metal deposition techniques, have enabled thin film metallization on both sides of the glass wafer for fine line redistribution layers (RDL). The thin film RDL is compatible with the TGV with excellent continuity in conductivity. The RDL metallization is plated to allow flip chip, land grid array, wire-bond, solder, or other interconnection methods. The paper will discuss the technical, material and process challenges in each of the areas mentioned above which enable a hermetically sealed glass package. Detailed data and experimental results will be discussed.