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The Effect of Lattice Mismatch on the Piezoresponse of Barium Titanate (BaTiO{sub}3) Thin Films on Magnesium Oxide (MgO) Substrates

机译:晶格错配对氧化镁(MgO)基材上钛酸钡(BATIO {} 3)薄膜压电响应的影响

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During the process of deposition of a thin piezoelectric film on a substrate, a difference in the in-plane lattice parameters of the two materials leads to internal stresses that may bias the film response under external mechanical or electric fields. While the lattice mismatch is expected to have a gradient along the thickness of the film, we investigate two extreme cases here: (i) the lattice mismatch is confined in a thin layer of the film at the film-substrate interface, (ii) the lattice mismatch spans the entire domain of the thin film. We propose a scalar, volume-averaged internal stress parameter as a metric to quantify the internal stress state of the thin film. An equivalent thermal strain approach is employed to model the mismatch and the effect of substrate and film dimensions on the average internal stress parameter, free film surface displacements and the potential drop across the film are studied computationally. In particular, it is seen that the effect of a smaller film thickness is to increase the potential drop when the lattice mismatch is confined to a thin layer at the interface whereas the potential drop decreases when the entire film has a uniform mismatch. In both cases, the effect of a larger substrate radius is to increase the potential drop.
机译:在基板上沉积薄压电膜的过程中,两种材料的平面内晶格参数的差异导致内部应力,其可以在外部机械或电场下偏置胶片响应。虽然预期晶格错配沿薄膜厚度具有梯度,但我们调查这里的两个极端情况:(i)晶格错配在薄膜 - 基板接口(ii)的薄膜上狭窄在薄膜的薄层中。(ii)格子错配跨越薄膜的整个域。我们提出了一个标量,体积平均的内应力参数作为指标,以量化薄膜的内部应力状态。使用等效的热应变方法来模拟基板和膜尺寸对平均内应力参数的粘接和膜尺寸的效果,计算地研究了自由膜表面位移和穿过膜的电位下降。特别地,可以看出,当晶格错配在界面处限制到薄层时,较小膜厚度的效果是增加电势下降,而当整个膜具有均匀的不匹配时,电位降低。在这两种情况下,较大的基底半径的效果是增加潜在的下降。

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