Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique

摘要

The GaInN/GaN multi-quantum-well orange light-emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition on sapphire substrates using a post-growth-annealing technique. The Mg-doped GaN layer was grown at a relatively low growth temperature of 900°C in order to avoid the thermal decomposition of indium-rich GaInN multi-quantum-well (MQW) structure during the Mg-doped GaN growth. After the growth, post-growth-annealing at 1000°C was performed to rectify the poor crystalline quality of Mg-doped GaN layer and make longer wavelength. The post-growth-annealed MQW LED showed a peak wavelength of 630 nm.