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Improved ESR on MNO_2 Tantalum Capacitors at Wide Voltage Range

机译:在宽电压范围内改进MNO_2钽电容上的ESR

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One common trend in switch-mode power supply, microprocessor, and digital circuit applications is to achieve reduced noise while operating at higher frequencies. In order realize this, components with low Equivalent Series Resistance (ESR), high capacitance and high reliability are required. A new generation of Low ESR tantalum chip capacitors has been developed utilizing a low resistivity MnO_2 electrolyte that enables very low component ESR. MnO_2 technology provides excellent field performance, environmental stability and high electrical and thermal stress resistance in wide voltage range from four to thirty-five volts. The capacitors are designed for operation in temperatures up to 125°C.
机译:开关模式电源,微处理器和数字电路应用中的一种常见趋势是在更高频率下运行时实现降低的噪声。为了实现这一点,需要具有低等效串联电阻(ESR),高电容和高可靠性的组件。已经开发了新一代低ESR钽芯片电容器,利用低电阻率MnO_2电解质,使得能够非常低分量ESR。 MnO_2技术在宽电压范围内提供出色的现场性能,环境稳定性和高电压和热应力阻力,范围为4至35伏。电容器设计用于温度高达125°C的温度。

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