Fabrication and epitaxial growth technology for III-V semiconductor devices have developed to the point where substantial levels of photonic integration are now feasible. Both highly complex and simple photonic integrated devices are currently the subjects of much active research and product development. These efforts are motivated by the many potential advantages of photonic integration, reduced size, lower power consumption, increased functionality, higher performance and above all else lower cost. In this paper we will discuss two different examples of photonic integrated devices that demonstrate some of the significant performance advantages that can be achieved with this technology. Both devices are fabricated using our deep ridge buried heterostructure technology [1] that combines both SAG and butt joint epitaxial techniques to obtain the maximum flexibility in the device design. The first device is a high-speed modulator with an integrated phase shifter that enables the transmitter chirp to be dynamically tuned. This enables the transmission performance to be optimized for different amounts of fiber dispersion. A schematic of the device is shown in figure 1.
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