Increasingly narrow gaps and greater depth/width aspect ratios of the underlying topography are becoming a challenge for HDP-CVD processing. HDP-CVD sources have stretched the technology capability to fill gaps from 0.25μm with aspect ratios of 2:1, down to gaps of 0.13μm with aspect ratios of 5:1. Next-generation requirements will be even more stringent and will require filling <0.10μm gaps having aspect ratios of 6:1. In this paper, we will review studies of processes that incorporate new gas chemistry, modified plasma source, and optimized power and pressure. We demonstrate processes for shallow trench isolation capable of meeting the 0.10μm technology node gap fill requirements. This technological extension has been achieved while maintaining high productivity and low cost of ownership.
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