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The Magnetic Susceptibility in Quantum Wires of Dilute Magnetic Materials

机译:稀磁性材料量子线中的磁化率

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In this paper we study the dia and paramagnetic susceptibilities in the quantum wires of dilute magnetic materials in the presence of a parallel magnetic field on the basis of a newly formulated electron dispersion law. It is found, taking quantum wires of Hg~(1-x)Mn_xTe and Cd_(1-x)Mn_xSe as examples, that both the susceptibilities increase with decreasing electron concentration and decreasing film thickness respectively in the quantum limit. The paramagnetic to diamagnetic susceptibility ratio for electrons in quantum wires of dilute materials deviates from the well known 1/3 rd rule together with the fact that there is a critical zone within which quenching of the diamagnetic susceptibility occurs.
机译:在本文中,我们在基于新配制的电子分散法的基础上,研究了在平行磁场的存在下在稀磁性材料的量子线中的DIA和顺磁性敏感性。发现,用HG〜(1-x)Mn_xte和CD_(1-x)Mn_xse的量子线作为示例,即分别在量子极限中降低电子浓度和膜厚度的增加而增加。稀释材料量子线中电子的抗磁磁性敏感比的顺磁性偏离众所周知的1/3 rd规则以及存在临界区的事实,在该临界区内发生抗磁性敏感性。

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