A Study on Thickness Dependence of Crystallinity in Silicon Thin Films

摘要

In this paper dependence of thickness of crystallinity of silicon thin films have been discussed. Intrinsic microcrystalline silicon thin films show a sharp dependence on its dark conductivity (10~(-4) - 10~(-9) Scm~(-1)) upon lowering thickness (2800 - 300A). The crystallinity of these films has been investigated with Raman spectroscopy and transition from microcrystalline to amorphous structure via decreasing crystalline volume fractions is revealed with lowering thickness. Signature of crystallinity is also examined by transmission electron microscopy and x-ray diffraction studies.